摘要
采用分离变量法求解柱坐标系下二维泊松方程,建立了考虑耗尽电荷和自由电荷的全耗尽阶梯掺杂沟道围栅MOSFET的二维体电势模型,并在此基础上得到阈值电压和亚阈值摆幅的解析模型。研究了不同区域长度和漏压下的表面势,分析了不同掺杂的区域长度和掺杂浓度对器件性能的影响。结果表明,与均匀掺杂的GAA MOSFET相比,阶梯掺杂结构不仅降低了漏端电场,而且能更好地抑制短沟道效应和热载流子效应;通过对掺杂区域参数进行优化,可以提高器件的可靠性。
A two-dimensional potential model for fully depleted stepped channel doping cylindrical gate-all-around metal-oxide-semiconductor field-effect transistor（GAA MOSFET）with considering the effect of the depletion charge and channel mobile charge was proposed by solving2-D Poisson′s equation with the method of separation of variables in the cylindrical coordinate system.Analytical models for threshold voltage and subthreshold swing were derived based on the potential model.The channel surface potential with different region lengths and drain voltages was investigated.Effects of region lengths and doping concentrations on the device performance were analyzed.Results show that,compared with uniform channel doping structure,this structure performs better in reducing the drain electric field and inhibiting the short channel effect and hot carrier effect.This structure can also improve the reliability of the device through optimizing doping area parameters.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2015年第2期109-114,共6页
Research & Progress of SSE
基金
国家核高基重大专项(2010ZX0103 0-001-001-004)
