期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

CuO纳米线阻变存储器的组装及电阻开关特性

Assembly of CuO Nanowire RRAM and Its Resistive Switching Characteristics
下载PDF
导出
摘要 用热氧化法在空气中加热铜片制备了CuO纳米线(CuO NWs),通过FESEM对纳米线表面进行了观察,并用液体转移法组装成功了一种简单的阻变存储器件。通过I-V测试系统观察到了Cu/CuO NWs/Cu器件表现出了明显的双极型和单极型。最后通过对比高阻态(HRS)和低阻态(LRS)的表面形貌,解释了Cu/CuO NWs/Cu器件的阻变机制。 The CuO nanowires were prepared by a thermal oxidation method of heating the copper plate in air.The nanowires surface was observed with field emission scanning electron microscope（FESEM）,and a simple RRAM was assembled by liquid transferring method.Obvious bipolar and unipolar properties of the Cu/CuO NWs/Cu device were observed by I-Vtest.Finally by comparing the surface morphology of high resistance state（HRS）and low resistance state（LRS）,the resistance mechanisms of the Cu/CuO NWs/Cu device was explained.
作者 阳斌 唐海涛 杨钊 刘安 刘宏武
机构地区 暨南大学信息科学技术学院电子工程系
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2015年第2期120-123,共4页 Research & Progress of SSE
基金 国家自然科学基金资助项目(11204105)
关键词 氧化铜 阻变存储器 CuO resistive random access memory（RRAM）
分类号 TN389 [电子电信—物理电子学]
  • 相关文献

参考文献11

  • 1Strukov D B,Snider G S,Stewart D R,et al.The missing memristor found[J].Nature,2008,453(7191):80-83.
  • 2Meijer G I.Materials science.Who wins the nonvolatile memory race?[J].Science(New York,NY),2008,319(5870):1625-1626.
  • 3Sawa A.Resistive switching in transition metal oxides[J].Materials Today,2008,11(6):28-36.
  • 4Akinaga H,Shima H.Resistive random access memory(ReRAM)based on metal oxides[J].Proceedings of the IEEE,2010,98(12):2237-2251.
  • 5Huang C W,Chen J Y,Chiu C H,et al.Revealing controllable nanowire transformation through cationic exchange for RRAM application[J].Nano letters,2014,14(5):2759-2763.
  • 6NiehC H,Lu M L,Weng T M,et al.Resistive memory of single SnO2 nanowire based switchable diodes[J].Applied Physics Letters,2014,104(21):213501-1-4.
  • 7Huang C W,Chen J Y,Chiu C H,et al.Revealing controllable nanowire transformation through cationic exchange for RRAM application[J].Nano letters,2014,14(5):2759-2763.
  • 8Herderick E D,Reddy K M,Sample R N,et al.Bipolar resistive switching in individual Au-NiO-Au segmented nanowires[J].Applied Physics Letters,2009,95(20):203505-1-3.
  • 9Kim D,Shin J H,Shin H S,et al.Single-crystalline CuO nanowire growth and its electrode-dependent resistive switching characteristics[J].Journal of Applied Physics,2013,114(4):043514-1-5.
  • 10Wu W W.Single crystalline CuO nanowire for resistive random access memory application[C].225th ECS Meeting.Ecs,2014.
固体电子学研究与进展
2015年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部