基于势阱近似的小尺寸MOSFETs反型层解析模型

An Analytical Model for Small Size MOSFETs Inversion Layer Using Potential Well Approximation

将垂直于栅氧化层/衬底界面方向的反型层电势分布规律近似为耗尽层的电势分布规律,采用WKB近似方法求解薛定谔方程,得到了量子机制下分析MOSFETs反型层的解析模型,进而对Al/SiO2/p-Si MOSFETs能级、子带电子密度和反型层质心进行了模拟计算,并将模拟结果与数值自洽结果进行了比较,模拟结果较好地与数值自洽结果相吻合。

On condition that the potential distribution of inversion layer perpendicular to the oxide/substrate interface was considered to be similar to the potential distribution of depletion layer,Schrodinger equation could be solved by using WKB approximation method and then an analytical model including quantum mechanism for MOSFETs inversion layer was obtained.On the basis of this model,the energy level,the subband electron concentration and the inversion layer centroid for Al/SiO2/p-Si MOSFETs were calculated.By comparing the results,it is found that the results from this model are in coincidence with those from the numerical self-consistent method.