大功率高光束质量1060nm大光腔非对称波导半导体激光二极管

High Power High Beam Quality 1060-nm Large Optical Cavity Asymmetric Waveguide Semiconductor Laser Diode

设计并制备了大功率高光束质量的1060nm波长的非对称波导半导体激光二极管．本激光二极管包含压应变InGaAs／GaAs双量子阱和GaAs／AlGaAs分别限制结构。为提高激光二极管的大功率性能，设计激光器二极管的垂直结构具有小快轴远场发散角，大光斑面积及低腔面光能密度，低光腔内吸收损耗和高内量子效率等性能。通过引入4tzm厚弱光限制Al-Ga—As波导，激光器二极管的远场发散角降到20°，光斑宽度增到接近1μm。量子阱位置偏调后得到的薄上波导层非对称波导结构可以使激光二极管即使在大电流注入时也能保持高的内量子效率。根据以上设计，分别制备了50μm宽条和窄条脊波导激光二极管。2mm腔长的宽条激光二极管得到1．3W连续光功率。单模脊波导激光器的直流光功率为600mW。

High power high beam quality 1060-nm InGaAs/GaAs quantum well （QW） semiconductor laser diode with an asymmetric large optical cavity （LOC） is designed and fabricated. The laser diode consists of compressively strained double InGaAs/GaAs quantum wells and a GaAs/A1GaAs separate confinement structure. To improve the high power performance, the transversal optical cavity is optimized to have low fast axis far-field divergence angle, large optical spot size and low facet optical density, low internal optical absorption loss and high internal quantum efficiency. By employing a weak optical confinement Al0.1 Ga0 9As waveguide with thickness of 4 μm, a low transversal far-field divergence angle of 20° and large optical spot size near 1 μm are obtained. By detuning the QW position, the asymmetric waveguide with thinner p-side waveguide enables the laser diode high internal quantum efficiency even in high current injection level. Based on the optimization, 1.3 W continue wave optical power is achieved for broad area lasers with cavity length and strip width of 2 mm and 50 μm, respectively. For single spatial mode ridge waveguide laser diodes with same cavity length, 600 mW continue wave optical power is obtained at 10 ℃.