基于铁电聚合物P(VDF-TrFE)的多级存储研究

Study on multilevel memory based on ferroelectric polymer P(VDF-TrFE)

铁电聚合物偏氟乙烯三氟乙烯共聚物(P(VDF-TrFE))具有可兼容硅基元件和可溶液加工等优点,在未来可擦写式非易失存储领域极具应用前景.构建多级存储态是提高存储密度和降低生产成本的有力途径.以纳米压印为主要实现手段,通过构建高度有序的纳米图案化导电基底的方式,简单快捷地实现了P(VDF-TrFE)薄膜高密度的多级存储功能.应用压电响应力显微镜(PFM)从微观上观测了图案化导电基底上P(VDF-TrFE)在电压加载后的极化变化情况,直观地证实了其在外电场的作用下形成了三种不同的极化状态.

With the advantages of fine compatibility with silicon elements and ease of solution process,ferroelectric polymer poly（vinylidene fluoride-ran-trifluoroethylene）（P（VDF-TrFE）））shows great prospects in future erasable non-volatile memories.Construction of multilevel states is a powerful way to increase storage density and reduce production cost.Using nanoimprint lithography as main technical means,we successfully realized P（VDF-TrFE）based multilevel memory with high density by simply fabricating highly ordered nanopatterned conductive substrates.In this paper,piezoresponse force microscopy piezoresponse force microscopy（PFM）was utilized for observing the bias voltage dependent polarization evolution of P（VDF-TrFE）on patterned conductive substrate,which visually confirmed our samples could form three different polarization statesits under different external electric fields.Our work provides a new route for the design of nano-scale multilevel storages.