低温共烧PZT压电陶瓷材料的研制

Development of Low Temperature Co-fired PZT Material

为了满足片式化压电陶瓷元件的低成本化对陶瓷材料低温烧结的要求,本文通过在P Z T陶瓷材料中添加烧结助剂P B N来降低陶瓷的烧结温度,研究了P B N的添加量对P Z T陶瓷材料晶相、陶瓷晶粒及介电常数、压电常数、机电耦合系数的影响,当添加6mol%的PBN到PZT陶瓷材料中,可使陶瓷材料的烧结温度下降至960℃,所制得陶瓷材料具有很好的压电性能:εr≈2100,Kp=0.74,D33=450p C/N,tanδ=1.4%,并且实现了陶瓷材料与全银内电极的共烧,可应用于制作片式多层压电扬声器的器件,大大降低了片式压电元件的成本。

In order to meet the low cost chip piezoelectric ceramic element on low temperature sintering of ceramic materials,by adding sintering additives PBN in PZT ceramics to decrease the sintering temperature,the effects of PBN content on the crystal phase of PZT ceramics,ceramics and dielectric constant,piezoelectric constant,the electromechanical coupling factor influence,when adding 6mol%PBN into PZT ceramic materials,can make the ceramic sintering temperature dropped to 960 ℃,the ceramic material system has good piezoelectric properties：εr≈2100,Kp=0.74,D33=450pC/N,tanδ=1.4%,and implements the ceramic material with silver electrode in sinter,can be used in making of chip multilayer piezoelectric speaker devices,greatly reduce the cost of the chip piezoelectric element.