偏压对Ti-Si-N纳米复合膜结构和性能的影响

Effect of Bias Voltage on Microstructure and Properties of Magnetron Sputtered Ti-Si-N Nanocomposite Films

以高纯Ti和Si为靶材,在不同偏压下于Ar/N2气氛中溅射沉积了Ti-Si-N纳米复合膜,采用原子力显微镜、X射线衍射(XRD)和划痕法研究了复合膜的结构、界面结合力和摩擦系数与偏压的关系.实验结果显示,溅射Ti-Si-N膜层结构为nc-TiN/a-Si3N4/a-和nc-TiSi2复合结构.纳米复合膜的XRD谱图出现(200)、(111)、(220)和(222)面衍射峰,其中的择优取向为(200)面.在偏压为-150V时,薄膜XRD谱图中出现TiSi2(311)面衍射峰.发现适当施加负偏压,有利于获得细小、均匀、致密和平整的Ti-Si-N纳米复合膜.在偏压为-120V时沉积的复合膜组织和性能最好,其表面粗糙度为3.26nm,界面结合强度为53N,平均摩擦系数为0.11.说明偏压对磁控溅射Ti-Si-N纳米复合膜的微结构和性能有明显影响.

Ti-Si-N nanocomposite films were prepared by co-sputtering Ti and Si targets in Ar/N2 gas atmosphere under different negative bias voltages.The effect of bias voltage on the structure,adhesion strength and friction coefficient of the deposited films was studied by using atom force microscope,X-ray diffraction（XRD）and scratch test.The Ti-Si-N film possesses nc-TiN/a-Si3N4/aand nc-TiSi2 nanocomposite structure.The nanocomposite films exhibit（200）,（111）,（220）and（222）reflections with a dominant orientation of the（200）reflection independent of bias voltage.It is found that structure,adhesion strength and friction coefficient depends on the bias voltage applied.Nanocrystalline TiSi2 phase is found on the-150 V biased film,showing that high bias voltage is beneficial to form TiSi2 crystallite.The maximum value of adhesion strength is 53 Nand the minimum value of friction coefficient is 0.11,they both are presented by the nanocomposite film produced at bias voltage of-120 V,perhaps contributed to a finer and smoother structure of this deposited film.