高k栅介质SOILDMOS管阈特性分析与建模

Analysis and modeling of threshold characteristic for SOI LDMOS with high-k gate dielectric

通过分析高k栅介质SOI LDMOS管沟道与埋氧层的关系,建立了SOI LDMOS管的阈特性模型。研究了器件主要结构参数对阈特性及小尺寸效应的影响,分析了阈值电压与高k栅介质的介电常数和应变Si层的掺杂浓度的关系。通过软件ISE TCAD进行模拟仿真。结果表明,在不同的tSi和NA条件下,阈值电压的模型计算与数值模拟值吻合率为94.8%,最大差值为0.012 V,不同沟道长度SOI LDMOS的阈值电压漂移率为3.52%,最大漂移电压为0.008 V,模型计算值与数值模拟结果基本吻合。

Through the analysis of the relationship between high k gate dielectric SOI LDMOS trench and buried oxygen layer, threshold characteristics model of SO1 LDMOS tube was established. The effect of device main structure parameters on the threshold characteristics and the small size effect were analyzed, the relationship of the threshold voltage and high k gate dielectric permittivity and the doping concentration of strain Si layer were analyzed. Simulation was conducted by using software ISE TCAD. Results show that under the condition of different tsi and NA, the self-agreement rate of model calculation and numerical simulation of threshold voltage is 94.8%, the biggest difference is 0.012 V, SOl LDMOS threshold voltage drift rate of different channel lengths is 3.52%, the maximum drift voltage is 0.008 V, model calculation values and numerical simulation results are basically in agreement.