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Research trends in electron-doped cuprate superconductors 被引量:1

Research trends in electron-doped cuprate superconductors
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摘要 In this review, we look back on some intriguing and puzzling issues in electron-doped cuprate superconductors, such as electron-hole asymmetry, two types of carriers, quantum critical points, order-parameter symmetry, etc. The necessity of study on this family is invoked in comparison with the hole-doped counterparts from several aspects. The related progress, especially in last few years, has been outlined point to point, as well as other hot topics like the discovery of ambipolar superconductors, the applications in superconducting electronics, and the emergency of superconductivity in parent compounds. In perspective, the utilization of blooming advanced techniques, electric double layer transistor and combinatorial film deposition, will bring some new insights into the mechanism such as electron-doped cuprate superconductors. In this review, we look back on some intriguing and puzzling issues in electron-doped cuprate superconductors, such as electron-hole asymmetry, two types of carriers, quantum critical points, order-parameter symmetry, etc. The necessity of study on this family is invoked in comparison with the hole-doped counterparts from several aspects. The related progress, especially in last few years, has been outlined point to point, as well as other hot topics like the discovery of ambipolar superconductors, the applications in superconducting electronics, and the emergency of superconductivity in parent compounds. In perspective, the utilization of blooming advanced techniques, electric double layer transistor and combinatorial film deposition, will bring some new insights into the mechanism such as electron-doped cuprate superconductors.
出处 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2015年第10期1-11,共11页 中国科学:物理学、力学、天文学(英文版)
基金 supported by the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07020100) the National Natural Science Foundation of China(Grant No.11474338) the National Key Basic Research Program of China(Grant No.2015CB921000)
关键词 electron-doped electronic structure quantum critical phenomena 铜氧化物超导体 电子掺杂 超导电子学 电子空穴 超导电性 不对称 临界点 序参数
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