摘要
E类功率放大器（PA）具有设计简单和高效率的优点,然而频率较高时功率管的寄生输出电容大于E类功率放大器所需的电容,这个寄生输出电容导致E类功率放大器的效率降低。提出一种高频E类功率放大器的设计方法,使用负载牵引得到考虑寄生输出电容后的最佳负载阻抗,再结合谐波阻抗控制方法设计E类功率放大器。采用飞思卡尔的横向扩散金属氧化物半导体（LDMOS）功率管MRF21010设计了一款工作在930~960 MHz的E类功率放大器。测试数据表明,该功率放大器的输出功率为36.8 d Bm（4.79 W）,具有79.4%的功率附加效率。
The class-E power amplifier（ PA） has advantages of design simplicity and high efficiency. However,at the high frequency,the parasitic output capacitance of the transistor becomes higher than the capacitance required to achieve class-E PA,and the output capacitance reduces the efficiency of class-E PA. A design method of high frequency class-E PA was introduced. The optimum load impedance considering parasitic output capacitance was obtained by load-pull simulation,and a class-E PA was designed by combining harmonic impedance control method. A class-E PA operating at 930-960 MHz was designed using a Freescale＇s laterally diffused metal oxide semiconductor（ LDMOS） transistor MRF21010. The measured data show that the output power is 36. 8 d Bm（ 4. 79 W） and the power added efficiency（ PAE） is 79. 4%.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第9期658-662,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(41075025)
