氧化铟锡(ITO)自组装修饰及其对有机电致发光器件性能的影响（英文）

Indium Tin Oxide Anode Self-Assembled Monolayer Modification for Device Performance Improvement of Organic Light-Emitting Diodes

设计合成了一种新型的有机硅氧烷Cz-Si,并将其用于ITO自组装修饰。制备的Cz-Si具有较好的稳定性,可以在空气中对ITO进行自组装修饰,实验操作简单。为考察ITO自组装修饰对有机电致发光器件性能的影响,分别以修饰后的ITO（ITO/SAM）及不修饰的ITO（unmodified）作阳极,制备了一系列有机电致发光器件ITO/SAM（or unmodified）/NPB（40~50 nm）/Alq3（60 nm）/Li F（1.0 nm）/Al。实验结果表明,ITO自组装修饰后器件性能可以得到显著提升,研究认为这与其调控ITO/有机层界面的电子能级、粗糙度以及界面一致性有关。

A novel alkoxysilane （Cz-Si） was synthesized and used as an active reagent for self-assembled monolayer （SAM） modification on indium tin oxide （ITO） surface. The as-prepared Cz-Si could modify the ITO surface successfully under the mild atmosphere without any protection, offering simple and easy experimental operation. To investigate the effect of SAM modification on the device performances, based on ITO/SAM anodes, a series of organic light-emitting diodes （OLEDs） were fabricated： ITO/SAM （or unmodified）/NPB （40-50 nm）/Alq3 （60 nm）/LiF （1.0 nm）/Al. The devices show improvement compared to their counterparts with bare ITO anodes. The improvement could be attributed to the modulating of the electronic energy, surface roughness and interface integrity at the ITO/hole transporting layer （HTL） interface by SAM modification.