单壁碳纳米管-石墨烯杂化材料的自组装及其电学性能（英文）

Single-wall carbon nanotube hybridized graphene films:self assembly and electrical properties

以Si为基底,采用气相沉积法制备出石墨烯(G/Si)薄膜。将含1%APTES的苯溶液与G/Si密封,在115℃下加热2 h,G薄膜上自组装单层APTES膜(SAM-G/Si)。将SAM-G/Si浸渍于酸处理后的单壁碳纳米管氯仿液中,45℃干燥即得到单壁碳纳米管-石墨烯杂化材料(SWCNT-G/Si)。结果表明,具有p-型电学性能的G/Si经表面改性后呈现出n-型性能,电容性能得到提高。

A SWCNT-G/Si hybrid film was fabricated from graphene （G） film by chemical vapor deposition and single-walled carbon nanotubes （SWCNTs） by an immobilization method, in which a 3-aminopropyltriethoxysilane monolayer was formed on a UV irradiated graphene film by self-assembly, and acid-oxidized SWCNTs were chemisorbed on it. The G/Si, 3-aminopropyltrie-thoxysilane immobilized G/Si and SWCNT-G/Si hybrid films were characterized by SEM, Rarnan spectroscopy, XPS, and conductivity and electrochemical tests. Results indicate that the immobilization changes the p-type G/Si into n-type by electron donation from a lone electron pair on the amine and the chemisorption reduces the n-type behavior. The SWCNT-G/Si hybrid film has a higher specific capacitance than the G/Si film. This approach could be of great use in the fabrication of supercapacitors, flexible hybrid electrodes and other devices.