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Effects of N concentration on electronic and optical properties of N-doped PbTiO_3 被引量:1

Effects of N concentration on electronic and optical properties of N-doped PbTiO_3
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摘要 The p-type N-doped PbTiO3 with different doping concentrations have been studied by first-principles calculations. The charge density differences, band structures, density of states and optical properties have been investigated. After an oxygen atom is substituted by a nitrogen atom in the crystals, the valance bands move to high energy levels and the Fermi energy level gets into the top of the valance bands. Results show that the values of the band gaps are decreased and the stability is weakened when the N concentration increases. The 2.5 at% N-doped PbTiO3 shows the best p-type conductivity and the visible-light absorption can be enhanced most at this doping concentration, which is necessary in semiconductors or photocatalysts. The p-type N-doped PbTiO3 with different doping concentrations have been studied by first-principles calculations. The charge density differences, band structures, density of states and optical properties have been investigated. After an oxygen atom is substituted by a nitrogen atom in the crystals, the valance bands move to high energy levels and the Fermi energy level gets into the top of the valance bands. Results show that the values of the band gaps are decreased and the stability is weakened when the N concentration increases. The 2.5 at% N-doped PbTiO3 shows the best p-type conductivity and the visible-light absorption can be enhanced most at this doping concentration, which is necessary in semiconductors or photocatalysts.
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第9期36-40,共5页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.10974077) the Innovation Project of Shandong Graduate Education,China(No.SDYY13093)
关键词 semiconductor doping electric property optical property electronic structure semiconductor doping electric property optical property electronic structure
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