4H-SiC肖特基二极管载流子输运的温度效应

Effect of temperature on the carrier transport property of 4H-SiC based Schottky barrier diode

以Cree公司生产的碳化硅肖特基二极管为研究对象,对其进行I-V测试.通过对实验数据的理论模拟,研究了碳化硅肖特基二极管的载流子输运机理及温度效应.研究结果表明:温度升高,碳化硅肖特基二极管的肖特基势垒高度降低,漏电流急剧增加.正向导通时符合热电子发射机理,镜像力和隧穿效应共同作用使得反向偏压下的漏电流增加并能较好地和实验值相一致.

In this paper, the current-voltage （I-V） measurement under different temperatures was carried out on the 4H-SiC Schottky barrier diode （SBD） purchased from Cree Inc. The carrier transport mechanism and the temperature effect of SBD were investigated through the theoretical simulation based on the experimental data. The Sehottky barrier height is decreased and leak- age current is increased sharply for SBD when the temperatures are increased. The SBD forward bias obeys the hot electron emis- sion mechanism. Taking the image force correction and tunneling effect into consideration, the high leakage current under reverse bias can be reasonably explained and is good agreement with the experiment results.