摘要
ＨｏｌｅＭｏｂｉｌｉｔｙｉｎＰｏｌｙ（Ｎ－ｖｉｎｙｌｃａｒｂａｚｏｌｅ）ＴｈｉｎＦｉｌｍＢａｓｅｄｏｎＳｉｌｉｃｉｕｍ①②ＣＨＥＮＢａｉｊｕｎ，ＷＡＮＧＸｉａｏｗｅｉ③，ＬＩＵＳｈｉｙｏｎｇ（ＳｔａｔｅＫｅｙＬａｂ．ｏｎＩｎｔｅｇｒａｔｅｄＯｐｔｏｅ...
The mobilities of holes in thin,spin-casting films of poly( N -vinylcarbazole)(PVK) based on silicium are measured using a time-of-flight (TOF) technique.The drift of hole mobility is strongly dependent on the electric field and temperature.At room temperature and an electric field of 2×10 5 V·cm -1 ,the effective mobility of hole is 7.14×10 -6 cm 2·V -1 ·s -1 ,in a 200 nm thick sample.
关键词
有机半导体
移动性
漂移时间
Mobility,Organic Semiconductor,Time of Flight
