SEM and Positron Annihilation Technology Investigation on the Defect Change with Thermal Treatment Temperature in GaP

SEM and Positron Annihilation Technology Investigation on the Defect Change with Thermal Treatment Temperature in GaP ①②

Defects in S doped GaP single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temperature was measured using positron annihilation spectrometer.The relationship between positron lifetime and the combination state of defects was discussed.

ＳＥＭａｎｄＰｏｓｉｔｒｏｎＡｎｎｉｈｉｌａｔｉｏｎＴｅｃｈｎｏｌｏｇｙＩｎｖｅｓｔｉｇａｔｉｏｎｏｎｔｈｅＤｅｆｅｃｔＣｈａｎｇｅｗｉｔｈＴｈｅｒｍａｌＴｒｅａｔｍｅｎｔＴｅｍｐｅｒａｔｕｒｅｉｎＧａＰ①②ＺＨＡＮＧＦｕｊｉａ，ＳＨＡＯＪｉａｆｅｎ...