摘要
Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.
Developing an electrostatic discharge（ESD） protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor（CMOS） technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor（GGNMOS） transistor triggered silicon-controlled rectifier（SCR）structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.
