摘要
Strontium-zinc-oxide（SrZnO） films forming the semiconductor layers of thin-film transistors（TFTs） are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide（ZnO） with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
Strontium-zinc-oxide（SrZnO） films forming the semiconductor layers of thin-film transistors（TFTs） are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide（ZnO） with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
基金
Project supported by the National Natural Science Foundation of China(Grant No.6140031454)
the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications
