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Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias

Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias
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摘要 The interplay between the electric and magnetic properties in a double quantum well heterostructure doped by magnetic ions is theoretically investigated. In this material, the magnetism is mediated by the hole gas. The total magnetic polarization of the system is controllable by an external applied bias. The device has two equilibrium states (symmetric and antisymmetric configurations). In the stable configuration (anti-ferromagnetic type), the particle spin distribution is reversed in the adjacent wells. The stability of the system is investigated by simulating the interaction of the hole gas with the light. By using an ab initio method, we estimate the switching time of the device. The interplay between the electric and magnetic properties in a double quantum well heterostructure doped by magnetic ions is theoretically investigated. In this material, the magnetism is mediated by the hole gas. The total magnetic polarization of the system is controllable by an external applied bias. The device has two equilibrium states (symmetric and antisymmetric configurations). In the stable configuration (anti-ferromagnetic type), the particle spin distribution is reversed in the adjacent wells. The stability of the system is investigated by simulating the interaction of the hole gas with the light. By using an ab initio method, we estimate the switching time of the device.
作者 P.Paradeo
机构地区 Unstituto de Fisica
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第7期22-28,共7页 半导体学报(英文版)
关键词 magnetic polarization quantum well stability magnetic polarization quantum well stability
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参考文献39

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