摘要
The surface chemical properties of gallium antimonide （GaSb） after ammonium sulfide （（NH4）2S） so- lution passivation have been studied by X-ray photoelectron spectroscopy （XPS）, time of flight secondary ion mass spectroscopy （TOF-SIMS） and I-V measurement. An advantage of neutral （NH4）2S ＋ S solution over pure （NH4）2S solution and alkaline （NH4）2S ＋ S solution has been found in the ability to passivate the GaSh surface by contrast and comparison. It has been found that alkaline （NH4）2 S ＋ S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure （NH4）2S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral （NH4）2 S ＋ S solution passivation worked much better in improving the surface properties of GaSb.
The surface chemical properties of gallium antimonide （GaSb） after ammonium sulfide （（NH4）2S） so- lution passivation have been studied by X-ray photoelectron spectroscopy （XPS）, time of flight secondary ion mass spectroscopy （TOF-SIMS） and I-V measurement. An advantage of neutral （NH4）2S ＋ S solution over pure （NH4）2S solution and alkaline （NH4）2S ＋ S solution has been found in the ability to passivate the GaSh surface by contrast and comparison. It has been found that alkaline （NH4）2 S ＋ S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure （NH4）2S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral （NH4）2 S ＋ S solution passivation worked much better in improving the surface properties of GaSb.
基金
Project supported by the National Natural Science Foundation of China(No.61474104)
