摘要
A1GaN/GaN high electron-mobility transistors (HEMTs) with 5 nm A1N passivation by plasma en- hanced atomic layer deposition (PEALD) were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition (PECVD). With PEALD A1N passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of A1N increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the A1N/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD A1N passivation can improve the high temperature operation of the A1GaN/GaN HEMTs.
A1GaN/GaN high electron-mobility transistors (HEMTs) with 5 nm A1N passivation by plasma en- hanced atomic layer deposition (PEALD) were fabricated, covered by 50 nm SiNx which was grown by plasma enhanced chemical vapor deposition (PECVD). With PEALD A1N passivation, current collapse was suppressed more effectively and the devices show better subthreshold characteristics. Moreover, the insertion of A1N increased the RF transconductance, which lead to a higher cut-off frequency. Temperature dependence of DC characteristics demonstrated that the degradations of drain current and maximum transconductance at elevated temperatures for the A1N/SiNx passivated devices were much smaller compared with the devices with SiNx passivation, indicating that PEALD A1N passivation can improve the high temperature operation of the A1GaN/GaN HEMTs.
基金
Project supported by the National Natural Science Foundation of China(No.60890192)