摘要
The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
基金
Project supported by the National Natural Science Foundation of China(Nos.61474110,61377020,61376089,61223005,61176126)
the National Science Fund for Distinguished Young Scholars(No.60925017)
