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Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer 被引量：1

Mechanism of the development of a weakly alkaline barrier slurry without BTA and oxidizer
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摘要 Controllable removal rate selectivity with various films （Cu, Ta, SiO2） is a challenging job in barrier CMP. H2O2 as an oxidizer and benzotriazole （BTA） as an inhibitor is considered to be an effective method in barrier CME Slurries that contain hydrogen peroxide have a very short shelf life because H2O2 is unstable and easily decomposed. BTA can cause post-CMP challenges, such as organic residue, toxicity and particle adhesion. We have been engaged in studying a weakly alkaline barrier slurry without oxidizer and benzotriazole. Based on these works, the objective of this paper is to discuss the mechanism of the development of the barrier slurry without oxidizer and benzotriazole by studying the effects of the different components （containing colloidal silica, FA/O complexing agent, pH of polishing solution and guanidine nitrate） on removal rate selectivity. The possible related polishing mechanism has also been proposed. Controllable removal rate selectivity with various films （Cu, Ta, SiO2） is a challenging job in barrier CMP. H2O2 as an oxidizer and benzotriazole （BTA） as an inhibitor is considered to be an effective method in barrier CME Slurries that contain hydrogen peroxide have a very short shelf life because H2O2 is unstable and easily decomposed. BTA can cause post-CMP challenges, such as organic residue, toxicity and particle adhesion. We have been engaged in studying a weakly alkaline barrier slurry without oxidizer and benzotriazole. Based on these works, the objective of this paper is to discuss the mechanism of the development of the barrier slurry without oxidizer and benzotriazole by studying the effects of the different components （containing colloidal silica, FA/O complexing agent, pH of polishing solution and guanidine nitrate） on removal rate selectivity. The possible related polishing mechanism has also been proposed.
作者 栾晓东 刘玉岭 牛新环 王娟
机构地区 Institute of Microelectronics
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第7期148-153,共6页 半导体学报（英文版）
基金 Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308) the National Natural Science Foundation of Hebei Province,China(No.E2013202247) the Department of Education-Funded Research Projects of Hebei Province,China(No.QN2014208)
关键词 CMP barrier slurry SELECTIVITY CLEANING CMP barrier slurry selectivity cleaning
分类号 TN305.2 [电子电信—物理电子学]
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参考文献22

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同被引文献15

  • 1ZHOU M,DENG H,ZHANG B C.Investigation of defect formation in porous ultra low-kfilm(k=2.5)for 28 nm technological node[J].Microelectronic Engineering,2015,140(1):6-10.
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  • 3MICHAEL L,ALEXANDRE D,CURTIS M,et al.Nanoscale chemical-mechanical characterization of nanoelectronic low-kdielectric/Cu interconnects[J].ECS Journal of Solid State Science and Technology,2016,5(4):3018-3024.
  • 4DINUSHA P,DAN V.Effect of linear aliphatic polyamines on copper removal rate in chemical mechanical planarization(CMP)[J].ECS Journal of Solid State Science and Technology,2015,4(11):5040-5042.
  • 5JIANG L,HE Y Y,NIU X Y,et al.Synergetic effect of benzotriazole and non-ionic surfactant on copper chemical mechanical polishing in KIO4-based slurries[J].Thin Solid Films,2014,558(17):272-278.
  • 6JANJAM S V S B,PEETHALA B C,ROY D,et al.Chemical mechanical planarization of TaN wafers using oxalic and tartaric acid based slurries[J].Electrochemical and SolidState Letters,2010,13(1):H1-H4.
  • 7JANJAM S V S B,PEETHALA B C,ZHENG J P,et al.Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions[J].Materials Chemistry and Physics,2010,123(2):521-528.
  • 8SURISETTY C V V S,PEETHALA B C,ROY D,et al.Utility of oxy-anions for selective low pressure polishing of Cu and Ta in chemical mechanical planarization[J].Electrochemical and Solid-State Letters,2010,13(7):H244-H247.
  • 9SHI X,SIMPSON D,ROYZ D.Tribo-electrochemical characterization of Ru,Ta and Cu CMP systems using percarbonate based solutions[J].ECS Journal of Solid State Science and Technology,2015,4(11):5058-5067.
  • 10LEONG L S,KELEHER J J,LIN B F,et al.Development of barrier slurry for improved electrical performance[J].Journal of the Electrochemical Society,2009,156(9):H756-H761.

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Journal of Semiconductors
2015年 第7期

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