MACE制备的硅纳米线拉曼光谱及陷光结构研究

LIGHT-TRAPPING STRUCTURE AND RAMAN SPECTRA OF SINWS FABRICATED BY MACE

采用金属辅助化学刻蚀法(MACE)制备硅纳米线,样品形貌表征结果表明:电化学反应的HF溶液浓度越小,硅纳米线直径越小,硅纳米阵列越稀疏。此外,对比分析单晶硅和硅纳米线的拉曼光谱,经拟合得到硅纳米线的双声子峰相比单晶硅双声子峰发生明显移动。测量不同HF浓度刻蚀的硅纳米线的反射率曲线,然后对硅纳米线的陷光性能进行数值模拟。

In this paper, the silicon nanowires （SiNWs） are fabricated by metal-assisted chemical etching（MACE）. The results of the morphology characterization showed that in the electrochemical reaction when the concentration of HF is smaller, the SiNWs would be finer and SiNW array would be sparser. In addition, when compared to that of the monocrystalline silicon the analysis of the Raman spectra of SiNWs shows that the second-order phonon peaks have shifted significantly. Furthermore, we also measure and numerically simulate the reflectivity curve of the SiNWs etched by different concentrations of HF and light-trapping performance.