摘要
主要对石榴石系列闪烁晶体近10多年的研究和发展情况进行了梳理。介绍了Pr、Ce掺杂的(Lu,Y)AG晶体中不同发光中心的发光机理、能量的传递、载流子再束缚过程等;阐述了反位缺陷(antisite defect,AD)对发光中心发光性能的影响及其作用机制;用带隙工程理论分析了Gd、Ga掺入可以消除AD缺陷副作用的机理。展示了新型石榴石晶体Gd3(Ga5–xAlx)O12:Ce(GGAG:Ce)晶体的光产额和能量分辨率,预计这类多组分掺杂将把石榴石晶体的发展引入一个新的阶段。
Recent development on garnet scintillation crystals studies was reviewed. Pr or Ce-doped （Lu,Y）AG crystals are introduced from structure, growth and scintillation characteristics. The scintillation mechanism, energy transfer and carriers-retrapping process of activators as well as the influence of antisite defects on their characterization were depicted. Antisite defects, which are suggested to be responsible for the slow components, were found to result from the high growth temperature, and could be eliminated by the incorporation of Gd and Ga ions. A compound of Gd3（Ga5–xAlx）O12：Ce presents an optimum light yield and a superior energy resolution among the existing oxide scintillators. The multi-components promote the development of garnet single crystal scintillators.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2015年第7期882-891,共10页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(51202276)
上海硅酸盐研究所创新项目基金(Y39ZC2130G)资助
关键词
石榴石晶体
闪烁性能
反位缺陷
掺杂
garnet crystal
scintillation property
antisite defects
doping effect
