摘要
Over one decade, various DNA sensors of carbon material-based field-effect transistors （FETs） have been inten- sively developed into an inspiring area of research and technology to substitute for the traditional method, for in- stance, fluorescence labeling detection. These FET DNA sensors have advantages of： directly read-out electrical signal, no need to label DNA molecule with fluorescer, high sensitivity, facility of miniaturization, simple device preparation process, high signal-to-noise ratio （SNR） and wide detection range. This review gives a comprehensive description on the state-of-the-art carbon-based FET DNA sensors from the aspect of both semiconductor material and structure of device. Several essential points in this research field, including sensitivity, selectivity, stability and challenges are addressed. Optimization of sensing performance and application of these devices are also discussed.
Over one decade, various DNA sensors of carbon material-based field-effect transistors （FETs） have been inten- sively developed into an inspiring area of research and technology to substitute for the traditional method, for in- stance, fluorescence labeling detection. These FET DNA sensors have advantages of： directly read-out electrical signal, no need to label DNA molecule with fluorescer, high sensitivity, facility of miniaturization, simple device preparation process, high signal-to-noise ratio （SNR） and wide detection range. This review gives a comprehensive description on the state-of-the-art carbon-based FET DNA sensors from the aspect of both semiconductor material and structure of device. Several essential points in this research field, including sensitivity, selectivity, stability and challenges are addressed. Optimization of sensing performance and application of these devices are also discussed.
