纳米线阵列的电化学优化光吸收增强研究

Research on Enhanced Light Absorption of Surface-modified Nanowire Arrays by Electrochemical Deposition

通过在自生长的半导体Cu2S纳米线阵列表面进一步应用电化学表面沉积处理,在纳米线表面形成尺寸更小的Cu2S纳米颗粒结构,实现了在不减小纳米线直径或增加纳米线长度的情况下,有效提高了纳米线阵列光吸收性能。利用I-V循环扫描曲线研究了以Cu2S纳米线阵列为工作电极的Cu2S沉积电位,利用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、紫外-可见-近红外分光光度计,对纳米阵列的相结构、微观表面形貌、晶体结构及光吸收能力进行了表征和分析。研究表明:沉积于单斜晶系Cu2S纳米线阵列上的纳米颗粒为斜方晶系Cu2S,沉积后纳米线表面结构改变,粗糙度明显增加,起到了减少纳米线的光反射、优化原纳米线阵列光吸收综合能力的作用。

The surface of self-grown monoclinic Cu2 S nanowire arrays were further modified by electrochemical deposition of Cu2 S nanoparticles to enhance the light absorption ability without lowering nanowirers diameter or raising nanowire^s length. Electrochemical deposition was investigated through cyclic voltammetry. SEM, XRD, TEM and UV-IR spectrophotometer were used to characterize the morphology, composition, crystal structure and visible light absorption ability of the nanowire arrays. The results showed that the surface of Cu2 S nanowires were covered with orthorhombic Cu2 S nano-particles, and the nano-sized roughness of nanowire surface could obviously reduced the light reflection of nanowire arrays.