APCVD法制备Nb∶TiO_2薄膜及其光电性能

Optical and Electric Properties of Nb∶TiO_2 Films Prepared by APCVD

透明导电氧化物（TCO）薄膜要求低电阻率和可见光区高透过率.目前最常用的是ITO薄膜存在着有毒、In成本高等难以克服的缺点.NTO薄膜是近年来新发现的一种具备广阔前景的TCO薄膜,但对它的认识还不充分.本文采用APCVD法在玻璃基板上成功制备出了颗粒均匀细小致密的NTO薄膜,探索出最佳反应温度为500℃～550℃,通过高真空退火的方式改善了薄膜晶体质量,光学透过率获得大幅提升,与经过掺杂但未经过H2退火的Nb∶TiO2薄膜和经过H2退火但未掺杂的TiO2薄膜相比较,经过掺杂和H2退火的Nb∶ TiO2薄膜其电学性能得到明显改善.

Low resistivity and high transmittance in the visible region are required for transparent conductive oxide （TCO） films. ITO films, which are conventionally used, still have a lot of unsolvable shortcomings, such as toxicity and high cost. Nb doped TiO2 （NTO） film is a newly developed and potentially applicable TCO invented in recent years. However, the characterizations have not been sufficiently recognized. In the present work, NTO films were deposited on a glass substrate by APCVD method, and the optimum reaction temperature was determined to be 500℃-550℃. After vacuum annealing, the crystalline quality and transmittance of NTO films were improved. Moreover, the results also indicate that H2 annealing process obviously improve the electrical properties of NTO films.