期刊文献+

蓝宝石钨金属化层显微分析 被引量:1

Microscopic Analysis of Tungsten Metallization Layer for Sapphire
下载PDF
导出
摘要 采用扫描电镜和X射线衍射仪对不同烧结温度和不同烧结次数获得蓝宝石钨金属化层进行了显微分析,进而探讨了蓝宝石钨金属化的机理。显微分析结果表明:蓝宝石钨金属化温度较低时,金属化层发黑、掉粉、体积收缩小;温度达到1850℃时,金属化层连续、致密,焊接后结构完整,界面清晰;温度达到1900℃时,金属化层液相外溢,表面龟裂;最佳烧结温度约1850℃。一次涂膏进行1450℃低温预烧结,再第二次涂膏进行1850℃高温烧结可以得到比较理想的金属化层。蓝宝石钨金属化过程包含化学反应过程和钨液相烧结过程,界面产物为Al5Y3O12。 By using scanning electron microscope and X-ray diffraction, tungsten metallization layer with different sintering temperatures and different sintering times for sapphire was analyzed. The metalli- zation mechanism was also discussed. The microscopic analysis results show that at a relatively low sinte- ring temperature, the metallization layer is black, powder falling and with a small shrinkage. When the temperature reaches 1850℃, the layer is continuous and compact, the welding structure is complete and the interface is clear. When the temperature reaches 1900℃, liquid spilling occurs with surface cracking. So the optimal sintering temperature is 1850℃. With a two-step sintering process, the first coating paste is sintered at 1450℃ and then the second coating paste is sintered at 1850℃, an ideal metallization layer could be obtained. Tungsten metallization process on sapphire is composed of chemical reaction and liquid phase sintering of tungsten. The reaction product is Al5 Y3O12.
出处 《真空电子技术》 2015年第4期23-27,共5页 Vacuum Electronics
关键词 蓝宝石 氧化铝 钨金属化 烧结 Sapphire, Alumina, Tungsten metallization, Sintering
  • 相关文献

参考文献7

二级参考文献31

  • 1邹勇明,吴金岭,郑宏宇.钨金属化与氧化铝陶瓷高温共烧[J].真空电子技术,2004,17(4):20-23. 被引量:15
  • 2王志刚,乔冠军,高积强,王红洁,金志浩.氧化铝陶瓷的钨金属化研究[J].真空电子技术,2005,18(4):56-58. 被引量:7
  • 3刘桂武,乔冠军,王红洁,金志浩,卢天健.活化钼-锰法连接高纯Al_2O_3陶瓷/不锈钢[J].稀有金属材料与工程,2007,36(5):920-923. 被引量:4
  • 4Mishra P, Sengupta P, Athavale S N et al. Metall Mater Trans[J], 2005, 36A: 1487.
  • 5Voytovych R, Robaut F, Eustathopoulos N. Acta Mater[J], 2006, 54:2205.
  • 6Kim J H, Yoo Y C. JMater Sci Lett[J], 1997, 16(14): 1212.
  • 7Zhang Chunguang, Qiao Guanjun, Jin Zhihao. d Europ Ceram Soc[J], 2002, 22(13): 2181.
  • 8Yu Zhishui, Liang Chao, Li Ruifeng et al. Trans Nonferrous Met Soc China[J], 2004, 14(1): 99.
  • 9Zharlg J X, Chandel R S, Chen Y Z et al. J Mater Process Teehnol[J], 2002, 122(2): 220.
  • 10ZhangChengbang(张成邦).电子元件与材料,1987,6(2):38-38.

共引文献61

同被引文献2

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部