瑞红RZJ-304光刻胶光刻工艺研究

A study on lithography process for the Ruihong RZJ-304 photoresist

利用光刻技术对瑞红RZJ-304正性光刻胶进行光刻工艺研究,用透射式光栅作为掩模版,通过改变光刻步骤中的前烘时间、曝光时间、显影时间等来研究光刻效果。实验结果表明,掩模版图形被成功地转移到了硅片基底上,显影后光刻胶厚度均匀,光刻胶线条呈周期性排列,得到了与掩模版尺寸一致的图形。这说明得到了适合RZJ-304光刻胶的光刻工艺。

Lithography is a very important step in fabrication of semiconductor devices. In this paper, lithography process was studied to obtain the suitable parameters by using Ruihong RZJ-304 positive photoresist. This project was done by controlling exposure time, developing time, soft-baking time and so on. The optical grating was used as a mask. The result shows that mask shape was transferred to surface of silicon successfully. The photoresist lines were periodic array and almost the same as the optical grating mask. The thickness of the photoresist lines was uniform. The proper lithography process for RZJ-304 photoresist was achieved successfullY.