Ⅲ-Ⅴ多结太阳电池隧道结模型的研究进展

Research Process of Tunnel Junction Models in Ⅲ-Ⅴ Multi-Junction Solar Cells

强调了隧道结模型在Ⅲ-Ⅴ多结太阳电池(MJSC)分析和模拟仿真中的重要性。介绍了隧道结的基本概念,并根据重要性程度,对隧道结主要的几种隧穿机制以及每种隧穿机制对隧道结J-V特性的影响进行了阐述。回顾了近年来Ⅲ-Ⅴ多结太阳电池隧道结模型的研究进展,详细分析了4种最有代表性、最常用的隧道结模型:等效电阻隧道结模型、短路隧道结模型、分布电路隧道结模型和数值仿真隧道结模型,包括这4种模型各自的优缺点、建模机理和适用范围以及目前存在的问题和潜在的可优化点。同时,对多结太阳电池隧道结结构和模型的发展趋势进行了展望。

The importance of tunnel junction models in the analysis and simulation ofⅢ-Ⅴ multijunction solar cells（MJSCs）is emphasized.The basic concept of the tunnel junction is introduced,and according to the degree of the importance,several main tunneling mechanisms of the tunnel junction and the influence of each tunneling mechanism on the J-V characteristic of the tunnel junction are elaborated.The research progresses of tunnel junction models inⅢ-Ⅴ multijunction solar cells are reviewed.The four kinds of most typical and commonly used tunnel junction models：equivalent resistance tunnel junction model,short circuit tunnel junction model,distributed circuit tunnel junction model and numerical simulation tunnel junction model are analyzed in detail,including their advantages and disadvantages,modeling mechanisms,range of application,existing problems and optimized potential.Meanwhile,the development trends of the tunnel junction structures and models for multi-junction solar cells are prospected.