共溅射制备W_xSi_(1-x)/Si多层膜应力的实验研究

Stress analysis of W_xSi_(1-x)/Si multilayer prepared by co-deposited magnetron sputtering

采用直流磁控溅射技术制备了周期厚度为27.5nm的W/Si多层膜,使用实时应力测量装置对其应力特性进行了研究。为降低膜层应力,采用W、Si共溅射技术制备WxSi1-x膜层替换W膜层,制备出WxSi1-x/Si多层膜,与W/Si多层膜的应力特性进行了比较研究。结果表明,W/Si多层膜为较大的压应力,测量值为-476.86 MPa,WxSi1-x/Si周期多层膜为较小的压应力,测量值为-102.84MPa。因此采用共溅射制备WxSi1-x代替W可以显著改善多层膜的应力特性。

W/Si multilayer film with periodic of 27.5nm was fabricated by using DC magnetron sputtering technology.The stress property has been studied by using the real time stress measuremenmt instrument.To reduce the stress between the layers,WxSi1-x material made by W and Si co-deposited technology was used to replace W material,and finally the WxSi1-x/Si film was fabricated.A comparative study of stress property between WxSi1-x/Si film and W/Si film has been conducted.The result indicates that W/Si periodic multilayer film shows relatively larger compressive stress.The value is- 476.86 MPa. WxSi1-x/Si periodic multilayer film shows relatively smaller compressive stress.The value is-102.84 MPa.Therefore,the replacement of W material by WxSi1-x material fabricated by co-deposited technology can significantly improve the stress of the multilayer film.