在Cu-Ni合金上直接生长石墨烯/氮化硼异质结构

Direct Synthesis of Graphene-h-BN Vertical Heterostructures on Cu-Ni Alloys

利用碳原子在铜镍合金中有限的溶解度,采用两步化学沉积法(Two-Regime CVD),实现直接以铜镍合金为衬底生长石墨烯/氮化硼纵向异质结。为了表征石墨烯/氮化硼异质结构的存在以及晶格质量,我们采用了共聚焦拉曼光谱仪对转移到二氧化硅衬底上的样品进行探测,并进一步利用扫描电子显微镜对样品的表面形貌进行表征。最后还提出探究该异质结构对石墨烯电学和热传导性质的影响。

According to the certain solubility of carbon atoms in Cu-Ni alloys, by two-regime chemical vapor deposition （CVD） methods, we achieve the direct synthesis of graphene/h-BN vertical heterostructures. In order to determine the existence and quality of graphene/h-BN heterostructures, we use the Confocal Raman spectroscopy to characterize the sample which has been transferred in SiO2/Si. Besides, a scanning electron microscopy （SEM） is used to observe the surface morphology of the heterostructure. Finally, we expect to study the influence on graphene electrical and thermal properties in graphene/h-BN heterostructures.