摘要
阻碍硅纳米晶LED器件在光电集成电路中的广泛应用的关键问题在于硅纳米晶电致发光强度较低。本文主要采用真空反应蒸发法和高温相分离方法来制备硅纳米晶样品,然后研究改变Si-nc浓度、改变衬底材料的电阻率、降低Si-nc与不同基体(SiO2、Si3N4)之间的界面势垒、场效应、电致表面等离子体等方法对硅纳米晶电致发光强度的影响。
Si-based light emission is of critical importance for Si optoelectronics. However, practical Si light sources, whether photo-excited or LED-like (light-emitting device), are still unavailable even after years of studies. One of the bottleneck problems lies in low light emission of Si-nc LED. In this work, firstly, a discussion on the vacuum reactive evaporation and high temperature phase separation technology of Si-nc preparation was taken. Secondly, EL spectra as functions of Si-nc concentration, EL intensities of Si-nc embedded in different substrate matrix, field-effcet approach and electro-excited surface plasmons were discussed.
出处
《真空》
CAS
2015年第5期43-46,共4页
Vacuum
关键词
硅纳米晶
电致表面等离子体场效应
界面效应
silicon nanocrystal
electro-excited surface plasmons field-effcet approach
interfacial effects