Hg_(1-x)Cd_xTe梯度带隙薄膜材料生长及红外透射光谱研究

Study on the Growth of Hgcdte Graded-Gap Films and the Infrared Transmission Spectra

利用气相外延法生长了Hg1-xCdxTe梯度带隙薄膜材料,通过小光点红外透射光谱测试,研究了材料的横向组分波动.利用多层模型和膜系传递矩阵对该薄膜材料的红外透射光谱和气相外延薄膜材料的纵向组分分布进行计算,计算结果与实验吻合,材料纵向组分分布与通过能谱测量的样品截面组分变化趋势一致.用光伏器件的制作工艺,选取气相外延生长的Au掺杂中波材料,制备了10元线列器件,测试结果表明器件性能较好,95K黑体D*λP可达4.20×1011(cm·Hz1/2·W-1).

Hg1-xCdxTe graded-gap films were grown by the method of vaper phase epitaxy,and the transverse composition non-uniformity of the films was researched by infrared transmission spectra.Applying the multilayer model and transfer matrix,the infrared transmission spectra and compositional profiles of the HgCdTe epilayers were calculated,the calculated values were consistent with the experimental results.The theoretical calculated compositional profile of the vaper phase epitaxy layers was corresponding to variation tendency of the experimental data measured by energy spectrum.Based on traditional photovoltaic technique,the 10×1linear focal plane arrays detectors were prepared by using Au-doped Hg1-xCdxTe film materials.Performances of the detectors are favorable,and the detectivity of the detector can be achieved 4.20×10^11/（cm·Hz^1/2·W-1）@95K.