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HF酸对玻璃浅层蚀刻模型的研究 被引量:2

Study on Superficial Chemical Etching Model for the Hydroflouric Acid/Silicon Dioxide System
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摘要 为控制石英玻璃与HF酸的反应,实现石英玻璃精密元件的化学蚀刻和对石英玻璃工艺品的精确加工,探讨了化学反应机理和腐蚀的动力学过程。重点探究了影响整个蚀刻过程的重要因素,HF酸溶液的浓度c、反应的温度T和反应的时间t与蚀刻深度之间的关系。结合power law幂率模型的原理,建立了适用于石英玻璃浅层蚀刻的数学模型。验证时,选取了10,20℃等温度下,4种不同浓度的HF酸体系,通过模拟曲线和实验数据的对比,得知误差基本维持在5%以内。因此,该模型可以对玻璃的浅层蚀刻进行比较准确的模拟。 In order to control the reaction of HF/SiO2 system and realize an accurate fabrication of precise element and glass handiwork, the chemical reaction mechanism and kinetics were discussed. The major factors to affect the etching process were investigated, such as concentration of HF, temperature and time. Combined with power law model, a superficial chemical etching model was established to describe the etching technology. Then the model was verified at 10 ℃and 20 ℃ with four different concentrations of HF. Analog curve plotted by the mathematical model was compared with experimental data. The results show that the range of error is within 5%. So the superficial chemical etching model has the ability to carry out an accuracy simulation.
出处 《当代化工》 CAS 2015年第9期2120-2123,2127,共5页 Contemporary Chemical Industry
关键词 HF 玻璃 浅层蚀刻 数学模型 HF SiO2 Superficial etching Mathematical model
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参考文献13

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二级参考文献9

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