化学计量比对BaTiO_3/Ni集成结构性能的影响

Influence of Stoichiometric Ratio on the Properties of BaTiO_3 Thin Films Grown on Nickel Substrates

该文采用化学溶液沉积法——高分子辅助沉积(PAD)法在多晶镍基片上成功制备了钛酸钡(BaTiO3)薄膜,并研究了前驱体溶液化学计量比对BaTiO3/Ni集成结构漏电特性和介电性能的影响。实验表明,钛过量的薄膜样品可能出现二氧化钛相,适宜浓度的钛过量可以降低BaTiO3/Ni集成结构1个数量级的漏电流密度,减少介电损耗约50%,并能有效提高集成结构的介电常数。对BaTiO3薄膜的漏电流导电机制进行了分析,并对钛过量影响集成结构的漏电特性和介电性能的原因进行了讨论。

Barium titanate（Ba Ti O3） thin films were successfully deposited on polycrystalline Ni substrates by the polymer-assisted deposition（PAD） technique. The influence of stoichiometric ratio of precursor solution to the dielectric properties and leakage characteristics of barium titanate thin film was studied. The experimental results show that Ti O2 appears in barium titanate films with excess Ti. With an appropriate concentration of excess Ti, leakage current density could be reduced by an order of magnitude, and dielectric loss could be reduced 50%, while dielectric constant of the film could be increased. The leakage mechanisms as well as the possible reasons for the impacts of Ti content on the dielectric and leakage properties of barium titanate thin film are also discussed.