摘要
近年来,镁掺杂氧化锌半导体纳米材料在透明电子元件、气体传感、光催化等领域有着广泛的应用。主要总结概括了MgxZn1–xO纳米材料的制备方法,并探究了其制备过程中可能存在的问题和解决方法。最后展望了MgxZn1–xO纳米材料在紫外光电探测方面的应用前景。
In recent years, extensive application of magnesium doping zinc oxide semiconductor nanomaterials is in transparent electronics, gas sensors, photocatalysis, etc. The fabrication methodologies of MgxZn1–xO nanomaterials are summarized, primarily. Subsequently, the possible problems in preparation process are investigated and solutions are put forth. Finally, there is an outlook about the application prospect of MgxZn1–xO nanomaterials in ultraviolet photoelectric detectors.
出处
《电子元件与材料》
CAS
CSCD
2015年第10期1-5,13,共6页
Electronic Components And Materials
关键词
镁掺杂
制备方法
综述
紫外光电探测
氧化锌纳米材料
相分离
激光液相烧蚀
Mg doping
fabrication methodologies
review
ultraviolet detectors
zinc oxide nanomaterials
phase separation
laser ablation in liquid
