基于单根酞菁铜纳米线的FET式H_2S气体传感器

H_2S sensors based on individual CuPc nanowire transistor

结合FET和一维微纳材料的优势,构筑了具有高灵敏度和低检测极限的FET式H2S气体传感器。研究结果发现,在室温条件下,器件对体积分数5×10–6至50×10–6的H2S具有良好的灵敏度和低检测极限(5×10–6)。相比于薄膜FET传感器,检测极限降至原来的1/20。与PMMA绝缘层比较研究结果显示:引起器件对H2S的高器件性能的原因主要归因于被暴露的导电沟道和微纳材料的性质。

An individual CuPc nanowire was fabricated as gas sensors for detecting H2S at room remperature. The sensors have high sensitivity toward 5×10–6 and 50×10–6 H2S and low detect limitation （5×10–6）. Compared to FET film sensors, the detection limitation is reduced by a factor of twenty. The comparative experiments between solid and gas dielectric devices show that the exposed conductive channel and property of nano materials is responsible for the sensitivity to H2S.