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第3代半导体氮化镓功率器件的发展现状和展望 被引量:8

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摘要 一、引言电力电子技术在人类的生产生活中扮演着重要的角色,日常生活中的家用电源到工业生产、电气化交通、新能源技术,电力电子技术无所不在。现如今,世界能源的40%是由电力能源构成,因此,它的进步和革新是推动人类社会发展的重要力量。
出处 《新材料产业》 2015年第10期31-38,共8页 Advanced Materials Industry
基金 国家"863"计划(课题编号:2015AA033305)的资助
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共引文献13

同被引文献37

  • 1TetsuzoUeda, SatonlTakahashi, HiroyukiUmimoto. Next-generation Power Switching Devices for Automotive Applications: GaN and SiC [J] . Panasonic Technical Journal, 2015 (1) : 32-37.
  • 2Kimimori Hamada, Member, IEEE, Masaru Nagao, Masaki Ajioka, and Fumiaki Kawai.SiC--Emerging Pow- er Device Technology forNext-Generation Electrically Powered Environmentally Friendly Vehicles [J] . IEEE Transactions on Electron Devices, Vol. 62, No. 2, Febnmry 2015.
  • 3John Roberts-GaN Systems Inc. , CANADA. Lateral GaN Transistors -A Replacement for IGBT devicesin Au- tomotiveApplications [C] . PCIM Europe 2014, 20 22 May 2014, Nuremberg, Germany.
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  • 6蔡蔚.新能源汽车产业的机遇和挑战[N].学习时报.2015-11-19.
  • 7Ming Su and Chingchi Chen. Can SiC or GaN power the next-generation hybrid electric vehicle drive systems [C] . CS international conference, March 18th, 2014, Frankfurt, Germany.
  • 8郑新.新型半导体功率器件在现代雷达中的应用研究(Ⅰ)[J].半导体技术,2009,34(9):828-832. 被引量:5
  • 9姜栋栋,王烨,卢峰.IGBT过电压产生机理分析及RC缓冲电路的设计[J].电力科学与工程,2011,27(4):23-29. 被引量:37
  • 10李祥生,黄立巍,郭莎莎,许峰.600 V GaN HEMT开关特性和封装研究[J].电力电子技术,2012,46(12):77-80. 被引量:1

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