酸性添加剂对多晶硅绒面形貌的影响

Influence of acid additives on textured surface microstructure of multi-crystalline wafer

采用各向同性腐蚀法制备多晶硅绒面,通常使用的腐蚀液为HNO3和HF的混合溶液,增加适量酸性添加剂,可以有效地改进制绒效果,提高多晶硅电池转换效率。文章研究了酸性添加剂在不同酸腐蚀液浓度配比条件下制备的绒面特性。研究结果表明,腐蚀液中加入酸性添加剂后,绒面表面腐蚀坑细小均匀,有效地降低了绒面反射率,减少了电池产生的漏电;当腐蚀液中HNO3/HF/酸性添加剂的浓度比为8∶1∶0.4时,所制备绒面的反射率达到最低值,为21.87%,其转换效率最高。

By applying the isotropie etching method on multi-crystalline silicon,a normal used mixed solution of HNO3 and HF is added some acid additives to improve texturing effect and poly cell efficiency as well. A series of experiments are carried out with different concentrations of acid solvent to study its texturing characteristic. The results show that the etch pits on the surface of multi-crystalline silicon are small and uniform after application of acid additives, which can effectively reduce texturing reflectance and cell discharge. When the proportion of HNOjHF/acid additives is 8：1：0.4,the reflectance reaches its lowest value while cell efficiency reaches its highest value.