摘要
为了深入研究杆箍缩二极管的物理性能,采用蒙特卡罗方法对中国工程物理研究院流体物理研究所1.2 MV"天蝎"X光机的杆箍缩二极管进行模拟研究,包括PIC模拟和光电子输运模拟。着重分析了杆箍缩二极管结构参数与阻抗及出光剂量等的关系,发现阻抗和出光剂量与阴阳极半径比正相关,而出光剂量和杆探出长度正相关。提出一种阻止阴极盘后表面发射电子的设想,有望显著提高X射线辐射剂量。
The impedance and X-ray radiography states are the main references of rod-pinch diode.In order to study the physical performances of rod-pinch diode,a PIC and photoelectron transport simulation based on Monte Carlo is used to simulate the physics of the 1.2 MV X-ray generator Scorpio rod pinch diode at Institute of Fluid Physics,CAEP.The influence of structure parameters,including anode-cathode radius rate and anode rod stretching out length,on the diode impedance and radiography is given.The simulation results show good uniformity with theory and experiment.A model is proposed to increase the radiation dose rate,which might be applied in the future design of rod-pinch diode.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2015年第9期241-245,共5页
High Power Laser and Particle Beams
基金
中国工程物理研究院流体物理研究所发展基金项目(SFZ20130202
SFZ20110202)
