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扫描干涉场曝光中关键技术的现状与发展趋势 被引量:2

Status and Development of Scanning Beam Interference Lithography System
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摘要 扫描干涉场曝光(SBIL)在制作大尺寸、纳米精度的衍射光栅中有着独特的优势。为了充分了解SBIL系统的技术特点,介绍了国内外SBIL技术的发展现状,并针对SBIL系统中的各个关键技术进行技术性的调研与总结,着重分析了各关键技术已有解决方法的基本原理、优点以及存在的局限性,结合具体的光栅应用要求,给出了各关键技术的相应具体指标,展望了其发展趋势。 Scanning beam interference lithography (SBIL) is advantageous to produce large-area linear diffraction gratings that are phase-accuracy to nanometer level. In order to comprehend the merits of SBIL, the research progress on SBIL both in China and abroad are introduced, and the key technologies in SBIL are summarized front the merits and limitation of the scheme and principle. And then for the application of the specific grating, parameters of the key technologies in SBIL are presented. The develol)ment of SBIL is forecasted.
出处 《激光与光电子学进展》 CSCD 北大核心 2015年第10期1-12,共12页 Laser & Optoelectronics Progress
基金 国家国际科技合作项目(2011DFR10010) 国家科技重大专项课题(2011ZX02402) 上海市科技人才计划项目(14YF1406300)
关键词 光栅 扫描干涉场曝光 衍射光栅 大尺寸 纳米精度 gratings scanning beam interference lithography diffraction gratings large-area nanometer level
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