利用太赫兹技术表征材料孔隙结构

Determination of Pore Structure by Terahertz Technology

本文利用激光打孔技术在硅片表面获得亚毫米级不同孔隙结构的样本,通过太赫兹时域光谱技术和太赫兹扫描成像技术对其进行太赫兹光谱分析和孔隙结构成像.通过对光谱信号特征参数的提取和拟合得知样品峰值、与孔面积之间的关系.结果表明,其中第一峰峰值与孔数具有线性关系,其峰值随着孔数增加.与此同时,三角孔和圆孔两种不同的孔形也可以被明显区分.利用成像技术,可以直观的获得样本的孔数、面积和孔分布.因此,可以根据光谱和成像的数据对微米级孔隙结构进行表征.

Laser drilling techniques was used to make samples with submillimeter pore structures in silicon surface A typical THz time-domain spectroscopy （THz-TDS） and a two-dimensional scanning imaging of THz-TDS was used to probe them. The results showed that the value of the first peak has a linear relationship with the number of holes and increases with the number of holes. Triangular holes and circular holes can be also distinguished. The use of imaging techniques can visually obtain the number of holes, area and pore size distribution of samples. Therefore, characterization based on submillimeter pore structure can be measured by spectrum and imaging.