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瞬态大电流测量结温中校温曲线弯曲现象的研究 被引量:3

Bending phenomenon of temperature calibration curve in junction temperature measurement by the high transient current
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摘要 利用脉宽250μs、占空比5%的0-1.5 A脉冲电流,分别在50,70,90,110,130℃条件下,对TO-247-2L封装型PIN快恢复二极管大电流下的校温曲线进行了测量分析.研究发现,恒定大电流条件下,二极管的校温曲线随温度变化发生弯曲.分析表明,弯曲现象主要是由于串联电阻受迁移率的影响随温度发生变化而引起的.通过实验测量及理论计算,得到了准确的非线性校温曲线,从而减小了瞬态大电流测量结温中的误差. To measure the junction temperature of diodes under operating conditions,the temperature calibration curve is studied under large current conditions.To avoid the self heating by the large current conditions,pulsed currents are used in the paper.The temperature calibration curve of TO-247-2L fast recovery diode is investigated in this paper.The0-1.5 A pulse current,of which the pulse width is 250 μs and the duty cycle is 5%,is chosen to study the temperature calibration curves under 50,70,90,110,130 ℃ respectively.The results show that under the large current condition,the temperature calibration curve bends.The main reason for the bending phenomenon is that the series resistance changes with temperature increasing,which is affected by the mobilities of electrons and holes in semiconductor material.With the temperature rising,the mobility decreases,which results in the increasing of series resistance.Due to the series resistance increasing The voltage on p-n junction will be reduced.For this reason,a higher voltage is needed to obtain the same current,and the temperature calibration curve will bend.There are two reasons which will lead to the temperature rising.The first reason is self-heating of devices by the power dissipation,and the second reason is that the temperature of device is heated by ambient temperature.Under the same temperature,self-heating behaviors of device by different currents will result in different series resistances.But in the paper,the results show that the series resistances under different currents are the same,which illustrates that self-heating is not the key reason for the change of series resistance.So,the temperature changing of the diode is caused by the ambient temperature rising,which verifies that the bending phenomenon of the temperature calibration curve of TO-247-2L fast recovery diode is caused by the ambient temperature rising.Then,through experimental measurements and theoretical calculations,the accurate nonlinear temperature calibration curve is acquired,which can reduce the measurement errors of high current transient junction temperature.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2015年第18期398-403,共6页 Acta Physica Sinica
基金 国家自然科学基金(批准号:61204081)资助的课题~~
关键词 二极管 瞬态大电流 校温曲线 串联电阻 diode the high transient current temperature calibration curve series resistance
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参考文献16

  • 1Kuball M, Riedel G J, Pomeroy J W, Sarua A, Uren M J, Martin T, Hilton K P, Maclean J O, Wallis D J.2007.IEEE 28 86.
  • 2Profumo F, 朱咏嘉.2000.变流技术与电力牵引, 2 :20.
  • 3Rakhmatov A Z, Abdulkhaev O A, Karimov A V, Yodgorova D M.2012.J. Engineer. Phys. Thermophys. 85 836.
  • 4Abdulkhaev O A, Yodgorova D M, Karimov A V, Karimov A A, Asanova G O.2012.J. Engineer. Phys. Thermophys. 85 851.
  • 5胡振邦.2014.硕士学位论文 (厦门: 厦门大学).
  • 6陈焕庭.2010.硕士学位论文(厦门: 厦门大学).
  • 7朱阳军, 苗庆海, 张兴华, Yang Lieyong, 卢烁今.2007.半导体学报,28 980.
  • 8卢烁今.2007.硕士学位论文(济南: 山东大学).
  • 9孔维贤.2013.硕士学位论文(南京: 南京大学).
  • 10胡红钱, 张文成.2013.电子世界 ,61: 60.

二级参考文献14

  • 1罗毅,郭文平,邵嘉平,胡卉,韩彦军,薛松,汪莱,孙长征,郝智彪.GaN基蓝光发光二极管的波长稳定性研究[J].物理学报,2004,53(8):2720-2723. 被引量:40
  • 2张跃宗,冯士维,谢雪松,李瑛,杨集,孙静莹,吕长志.半导体功率发光二极管温升和热阻的测量及研究[J].Journal of Semiconductors,2006,27(2):350-353. 被引量:18
  • 3刘乃鑫,王怀兵,刘建平,牛南辉,韩军,沈光地.p型氮化镓的低温生长及发光二极管器件的研究[J].物理学报,2006,55(3):1424-1429. 被引量:22
  • 4Hori A, Yasunaga D, Satake A, Fujiwara K 2001 Appl. Phys. Lett. 79 3723.
  • 5Cao X A, Leboeuf S F, Rowland L B 2003 Appl. Phys. Lett. 82 3614.
  • 6Jeff Y Tsao 2002 Light Emitting Diodes (LEDs) for General Illumination (Washington: Optoelectronics Industry Development Association) pp4-- 10.
  • 7Park J, Lee C C 2005 IEEE Elec. Dev. Lett. 26 308.
  • 8Cao X A, Teetsov J M, D'Evelyn M P, Merfeld D W 2004 Appl. Phys. Lett. 85 7.
  • 9Shan W, Schmidt T J, Yang X H, Hwang S J, Song J J, Goldenberg B 1995 Appl. Phys. Lett. 66 985.
  • 10Shan W, Eittle B D, Song J J, Feng Z C, Schurman M, Stal R A 1996 Appl. Phys. Lett. 69 3315.

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