摘要
To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.
To obtain thermal contact resistance（TCR） between the vertical double-diffused metal-oxide-semiconductor（VDMOS） and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.
基金
Project supported by the National Natural Science Foundation of China(Grant No.61204081)
