摘要
Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
Modulation of the Schottky barrier heights was successfully demonstrated for WNx/p-Ge and WNx/n-Ge contacts by increasing the nitrogen component in the WNx films. The WN0.38/p-Ge contact exhibits rectifying characteristic and an apparent Schottky barrier of 0.49 eV while the WN0.38/n-Ge Schottky contact exhibits quasi-Ohmic current–voltage characteristics. Dipoles formed at the contact interface by the difference of the Pauling electronegativities of Ge and N are confirmed to alleviate the Fermi-level pinning effect.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)
the National Basic Research Program of China(Grant Nos.2012CB933503 and 2012CB632103)
the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)
