摘要
InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
InAs1-xSbx with different compositions is grown by molecular beam epitaxy on （100）-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
基金
Supported by the Aeronautical Science Foundation of China under Grant No 20132435
the National High-Technology Research and Development Program of China under Grant No 2013AA031903
the National Natural Science Foundation of China under Grant Nos 61106013 and 61275107
the China Postdoctoral Science Foundation under Grant No 2014M560936
