期刊文献+

Fabrication of Through Micro-hole Arrays in Silicon Using Femtosecond Laser Irradiation and Selective Chemical Etching 被引量:2

Fabrication of Through Micro-hole Arrays in Silicon Using Femtosecond Laser Irradiation and Selective Chemical Etching
下载PDF
导出
摘要 We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution. The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy, The effects of the pulse number on the depth and diameter of the holes are investigated. Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated. We demonstrate a method of fabricating through micro-holes and micro-hole arrays in silicon using femtosecond laser irradiation and selective chemical etching. The micro-hole formation mechanism is identified as the chemical reaction of the femtosecond laser-induced structure change zone and hydrofluoric acid solution. The morphologies of the through micro-holes and micro-hole arrays are characterized by using scanning electronic microscopy, The effects of the pulse number on the depth and diameter of the holes are investigated. Honeycomb arrays of through micro-holes fabricated at different laser powers and pulse numbers are demonstrated.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第10期142-145,共4页 中国物理快报(英文版)
基金 Supported by the National Basic Research Program of China under Grant No 2012CB921804 the National Natural Science Foundation of China under Grant Nos 11204236 and 61308006 the Collaborative Innovation Center of Suzhou Nano Science and Technology
  • 相关文献

参考文献22

  • 1Motoyoshi M 2009 Proc.IEEE 97 43.
  • 2Liu X X,Zhu Z M,Yang Y T,Wang F J and Ding R X 2014 Chin.Phys.B 23 583.
  • 3Dong G,Wu W X and Yang Y T Acta Phys.Sin.64 026601(in Chinese).
  • 4Beetz C P,Boerstler R,Steinbeck J,Lemieux B and Winn D R 2000 Nucl.Instrum.Methods Phys.Res.Sect.A 442 443.
  • 5Siegmund O H W,Tremsin A S,Vallerga J V,Beetz C P,Boerstler R W,Yang J and Winn D R 2002 Proc.SPIE 4497 139.
  • 6Lapington J S,Ashton T J R,Ross D and Conneely T 2012 Nucl.Instrum.Methods Phys.Res.Sect.A 695 78.
  • 7Chen X M,Lin J L,Yuan D,Ci P L,Xin P S,Xu S H and Wang L W 2008 J.Micromech.Microeng.18 037003.
  • 8Wang F,Xu S H,Zhu S S,Peng H,Huang R,Wang L W,Xie X H and Chu P K 2013 Electrochim.Acta 87 250.
  • 9Yu S J,Luo C H,Wang L W,Peng H and Zhu Z Q 2013 Analyst 138 1149.
  • 10Ma X Z,Zhang R,Sun J B,Shi Y and Zhao Y 2015 Chin.Phys.Lett.32 045202.

同被引文献18

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部