摘要
设计了一种可用于UHF RFID读写器芯片中VCO供电的低噪声、大带宽(1MHz)内高PSRR、片外无补偿电容的LDO。根据LDO基本结构对输出噪声进行详细分析;在带隙基准输出端构造一低通滤波器,有效移除了带隙基准对LDO输出噪声的影响;提出用二极管连接的MOS管代替LDO中的分压电阻,使得输出噪声得到进一步优化。电路采用IBM 0.18μm CMOS工艺进行设计和仿真,在10kHz频率处,PSRR为-70dB,输出噪声为21.01nV·Hz-1/2;在1 MHz频率处,PSRR为-47dB,输出噪声为6.187nV·Hz-1/2;在10 MHz频率处,PSRR为-27dB,输出噪声为6.244nV·Hz-1/2。
A low noise high PSRR within wide bandwidth （1 MHz） and capacitor-less low dropout voltage regulator （LDO） for VCO power supply in UHF RFID reader was proposed. According to the basic structure of LDO, the output noise was analyzed detailedly. To remove the bandgap＇s output noise effectively, a low pass filter was added in the output of the bandgap. The voltage divider resistor of LDO was replaced by the diode-connected MOS, so that the LDO＇s output noise could be further optimized. The proposed circuit had been simulated in IBM 0.18 btm CMOS process. It had achieved a PSRR of --70 dB at 10 kHz, --47 dB at 1 MHz and still --27 dB at 10 MHz. The output noise voltage in these three frequency points were 21.01 nV · Hz^-1/2 , 6. 187 nV · Hz^ -1/2 and 6. 244 nV· Hz^-1/2 , respectively.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第5期602-606,共5页
Microelectronics
基金
国家自然科学基金资助项目(61306034
61302005)
